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  Datasheet File OCR Text:
 INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BD787
DESCRIPTION *DC Current Gain: hFE= 40~250(Min)@ IC= 0.2A *Collector-Emitter Sustaining Voltage : VCEO(SUS)= 60V(Min) *Complement to type BD788
APPLICATIONS *Designed for low power audio amplifier and low current, high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL VCBO VCEO VEBO IC ICM IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
VALUE 80
UNIT V
Collector Current-Continuous Collector Current-Peak
w w
scs .i w
60 6 4 8 1 15 150 -65~150
V
V
.cn mi e
A A A
Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range
PC TJ Tstg
W
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 8.34 UNIT /W
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
BD787
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 10mA; IB= 0
60
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 0.5A; IB= 50mA
0.4
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 1A; IB= 0.1A
B
0.6
V
VCE(sat)-3
Collector-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
B
0.8
V
VCE(sat)-4
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.8A
B
2.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
B
VBE(on)
Base-Emitter On Voltage
ICEX
Collector Cutoff Current
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
ww w
scs .i
VCE= 30V; IB= 0
B
IC= 2A; VCE= 3V
VCB= 80V;VBE(off)= 1.5V VCB= 40V;VBE(off)= 1.5V;TC=125
.cn mi e
40 25
2.0
V
1.8 1.0 0.1 0.1
V A mA mA A
VEB= 6V; IC= 0
1.0
IC= 0.2A; VCE= 3V
250
hFE-2
DC Current Gain
IC= 1A; VCE= 3V
hFE-3
DC Current Gain
IC= 2A; VCE= 3V
20
hFE-4
DC Current Gain
IC= 4A; VCE= 3V
5
fT
Current-Gain--Bandwidth Product
IC= 0.1A; VCE= 10V
50
MHz
COB
Collector Output Capacitance
IE= 0; VCB= 10V; f= 0.1MHz
50
pF
isc Websitewww.iscsemi.cn
2


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